2SK299 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK299
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET 2SK299

2SK299 Datasheet (PDF)

..1. Size:123K hitachi
2sk298 2sk299.pdf

..2. Size:277K inchange semiconductor
2sk299.pdf

isc N-Channel MOSFET Transistor 2SK299FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:424K toshiba
2sk2993.pdf

2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2993 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 82 m (typ.) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V

0.2. Size:417K toshiba
2sk2995.pdf

2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2995 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 48 m (typ.) (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (

0.3. Size:391K toshiba
2sk2992.pdf

2SK2992 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2992 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.2 (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 2.0~3.5 V

0.4. Size:367K toshiba
2sk2998.pdf

2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2998 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS = 11.5 (typ.) (ON) High forward transfer admittance : |Y | = 0.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =

0.5. Size:411K toshiba
2sk2996.pdf

2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2996 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.74 (typ.) (ON) High forward transfer admittance : |Y | = 6.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

0.6. Size:420K toshiba
2sk2991.pdf

2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2991 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.35 (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

0.7. Size:1503K kexin
2sk2992.pdf

SMD Type MOSFETN-Channel MOSFET2SK2992 Features 1.70 0.1 VDS (V) = 200V ID = 1 A (VGS = 10V) RDS(ON) 3.5 (VGS = 10V)0.42 0.10.46 0.1 High Forward Transfer Amdittance Low Leakage Current1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 Drain-Gate Voltage (RGS=20K)

0.8. Size:355K inchange semiconductor
2sk2993s.pdf

isc N-Channel MOSFET Transistor 2SK2993SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.11(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.9. Size:273K inchange semiconductor
2sk2995.pdf

isc N-Channel MOSFET Transistor 2SK2995FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.10. Size:224K inchange semiconductor
2sk2996.pdf

isc N-Channel MOSFET Transistor 2SK2996FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSLow leakage currentHigh forward transfer admittanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Relay Drive and motor Drive ApplicationABSOLUTE MAXIMUM RATINGS(T =25)

0.11. Size:281K inchange semiconductor
2sk2993l.pdf

isc N-Channel MOSFET Transistor 2SK2993LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.11(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.12. Size:355K inchange semiconductor
2sk2991s.pdf

isc N-Channel MOSFET Transistor 2SK2991SFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.13. Size:281K inchange semiconductor
2sk2991l.pdf

isc N-Channel MOSFET Transistor 2SK2991LFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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