2SK1952 Todos los transistores

2SK1952 Silicon N Channel MOS FET Application TO 220FM High speed power switching Features Low on resistance High speed switching 2 1 2 Low drive current 3 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche ratings 3 Table 1 Absolute Maximum Ratings (

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and

2SK1957 Silicon N Channel MOS FET REJ03G0988-0200 (Previous ADE-208-1336) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code PRSS0003AD-A (Package name

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type MOSFET N-Channel MOSFET 2SK1959 1.70 0.1 Features VDS (V) = 16V ID = 2A Drain (D) RDS(ON) 3.2 (VGS = 1.5V) 0.42 0.1 0.46 0.1 RDS(ON) 0.5 (VGS = 4V) Internal Gate (G) diode Gate 1.Gate protection 2.Drain diode 3.Source Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16