2SJ125 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ125
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 0.01 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 220 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de 2SJ125 MOSFET
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2SJ125 datasheet
2sj125.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub
2sj128-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SK1949S , 2SK1952 , 2SK1975 , 2SK2957L , 2SK2957S , 2SK2958L , 2SK2958S , 2SJ0536 , IRFZ48N , 2SJ128-Z , 2SJ132-Z , 2SJ133-Z , 2SJ145 , 2SJ147 , 2SJ172 , 2SJ173 , 2SJ174 .
History: RQA0008NXAQS | STT3962N | 2SK3572-Z | CS460FA9H | TPM2008EP3-A | SL2302M | ZXMNS3BM832TA
History: RQA0008NXAQS | STT3962N | 2SK3572-Z | CS460FA9H | TPM2008EP3-A | SL2302M | ZXMNS3BM832TA
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