2SJ132-Z Todos los transistores

 ..1. Size:369K  renesas
 2sj132-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:132K  nec
 2sj132.pdf

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Gate drive available at logic level (VGS = -4 V) High current control available in small dimension due to low RDS(on) ( 0.25 ) 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard P

 9.1. Size:86K  renesas
 2sj130.pdf

2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package co

 9.2. Size:364K  renesas
 2sj133-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:96K  nec
 2sj134.pdf

 9.4. Size:154K  nec
 2sj138.pdf

 9.5. Size:130K  nec
 2sj133.pdf

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Gate drive available at logic level (VGS = 4 V) High current control available in small dimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard

 9.6. Size:159K  nec
 2sj135.pdf

 9.7. Size:97K  no
 2sj139.pdf

 9.8. Size:100K  no
 2sj137.pdf

 9.9. Size:91K  no
 2sj136.pdf

 9.10. Size:1252K  kexin
 2sj130s.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ130S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-300V ID =-1 A (VGS =-10V) 0.127 +0.1 0.80-0.1 RDS(ON) 8.5 (VGS =-10V) D max High speed switching Low drive current G + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source 4 Drain S Ab

 9.11. Size:253K  inchange semiconductor
 2sj139.pdf

isc P-Channel MOSFET Transistor 2SJ139 FEATURES Drain Current I =-10@ T =25 D C Drain Source Voltage- V = -100(Min) DSS Static Drain-Source On-Resistance R = 0.3(Max)@V = -10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION DC-DC converter, power switch. ABSOLUTE MAXIMUM RATINGS(T