2SJ173 Todos los transistores

 ..1. Size:61K  njs
 2sj173.pdf

 9.1. Size:320K  nec
 2sj179.pdf

 9.2. Size:399K  nec
 2sj178.pdf

 9.3. Size:119K  hitachi
 2sj169 2sj170.pdf

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 9.4. Size:42K  hitachi
 2sj172.pdf

2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2

 9.5. Size:29K  hitachi
 2sj175.pdf

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Abso

 9.6. Size:273K  hitachi
 2sj176.pdf

 9.7. Size:29K  hitachi
 2sj177.pdf

2SJ177 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ177 Abso

 9.8. Size:575K  hitachi
 2sj174.pdf

 9.9. Size:1334K  kexin
 2sj179.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ179 1.70 0.1 Features VDS (V) =-30V ID =-1.5 A (VGS =-10V) RDS(ON) 1 (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 1.5 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID

 9.10. Size:1602K  cn vbsemi
 2sj179.pdf

2SJ179 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL

 9.11. Size:796K  cn vbsemi
 2sj177.pdf

2SJ177 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel MO

 9.12. Size:193K  inchange semiconductor
 2sj170.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ170 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application

 9.13. Size:193K  inchange semiconductor
 2sj171.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ171 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application A