2SJ174 Todos los transistores

 

2SJ174 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ174
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 125 nS
   Cossⓘ - Capacitancia de salida: 990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET 2SJ174

 

2SJ174 Datasheet (PDF)

 ..1. Size:575K  hitachi
2sj174.pdf

2SJ174
2SJ174

 9.1. Size:320K  nec
2sj179.pdf

2SJ174
2SJ174

 9.2. Size:399K  nec
2sj178.pdf

2SJ174
2SJ174

 9.3. Size:61K  njs
2sj173.pdf

2SJ174

 9.4. Size:119K  hitachi
2sj169 2sj170.pdf

2SJ174
2SJ174

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

 9.5. Size:42K  hitachi
2sj172.pdf

2SJ174
2SJ174

2SJ172Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2

 9.6. Size:29K  hitachi
2sj175.pdf

2SJ174
2SJ174

2SJ175Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ175Abso

 9.7. Size:273K  hitachi
2sj176.pdf

2SJ174
2SJ174

 9.8. Size:29K  hitachi
2sj177.pdf

2SJ174
2SJ174

2SJ177Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ177Abso

 9.9. Size:1334K  kexin
2sj179.pdf

2SJ174
2SJ174

SMD Type MOSFETP-Channel MOSFET2SJ1791.70 0.1 Features VDS (V) =-30V ID =-1.5 A (VGS =-10V) RDS(ON) 1 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID

 9.10. Size:1602K  cn vbsemi
2sj179.pdf

2SJ174
2SJ174

2SJ179www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL

 9.11. Size:796K  cn vbsemi
2sj177.pdf

2SJ174
2SJ174

2SJ177www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MO

 9.12. Size:193K  inchange semiconductor
2sj170.pdf

2SJ174
2SJ174

INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ170DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive application

 9.13. Size:193K  inchange semiconductor
2sj171.pdf

2SJ174
2SJ174

INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ171DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationA

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