2SJ687-ZK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ687-ZK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.6 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 1070 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO252

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2SJ687-ZK Datasheet (PDF)

..1. Size:269K renesas
2sj687-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.1. Size:189K toshiba
2sj680.pdf

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching Applications Unit: mmChopper Regulator, DC/DC Converter and Motor Drive Applications MAX Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs|

9.2. Size:180K toshiba
2sj681.pdf

2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit: mmApplications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) (VGS = -10 V) 1.1 0.2 High forward transfer admittance: |Yfs| = 5.0 S (typ.) 0.9 Low leakage current:

9.3. Size:261K sanyo
2sj683.pdf

Ordering number : ENA1057 2SJ683SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ683ApplicationsFeatures Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source V

9.4. Size:816K cn vbsemi
2sj681.pdf

2SJ681www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.010 at VGS = - 10 V 55RoHS*- 40COMPLIANT0.014 at VGS = - 4.5 V 54TO-251SGG D SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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