2SJ687-ZK Todos los transistores

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2SJ687-ZK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ687-ZK

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 36 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 220 nS

Conductancia de drenaje-sustrato (Cd): 1070 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO252

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2SJ687-ZK Datasheet (PDF)

1.1. 2sj687-zk.pdf Size:269K _upd

2SJ687-ZK
2SJ687-ZK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.1. 2sj683.pdf Size:261K _upd

2SJ687-ZK
2SJ687-ZK

Ordering number : ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source V

5.2. 2sj681 100301.pdf Size:180K _toshiba

2SJ687-ZK
2SJ687-ZK

2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) (VGS = -10 V) 1.1 ± 0.2 High forward transfer admittance: |Yfs| = 5.0 S (typ.) 0.9 Low leakage current: I

 5.3. 2sj680.pdf Size:189K _toshiba

2SJ687-ZK
2SJ687-ZK

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V) 2SJ680 Switching Applications Unit: mm Chopper Regulator, DC/DC Converter and 6.5±0.2 Motor Drive Applications 5.2±0.2 0.6 MAX. • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) 1.1±0.2 0.9 • High forward transfer admittance: |Yfs| = 2.0 S (typ.) 0.6 MAX • Low leakage current: ID

Otros transistores... 2SJ132-Z , 2SJ133-Z , 2SJ145 , 2SJ147 , 2SJ172 , 2SJ173 , 2SJ174 , 2SJ687 , IRF630A , 2SJ690 , 2V7002K , 2V7002L , 2V7002W , 2SJ650 , 2SJ651 , 2SJ652-1E , 2SJ661-1E .

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