2SJ661-DL-E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ661-DL-E
Código: J661
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 65 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 38 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.6 V
Carga de compuerta (Qg): 80 nC
Tiempo de elevación (tr): 285 nS
Conductancia de drenaje-sustrato (Cd): 470 pF
Resistencia drenaje-fuente RDS(on): 0.039 Ohm
Empaquetado / Estuche: TO263
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2SJ661-DL-E Datasheet (PDF)
3.1. 2sj661-1e.pdf 
Size:283K _upd
Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com – – Ω 60V, 38A, 39m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=29.5m (typ.) • Input capacitance Ciss=4360pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage
4.1. 2sj661.pdf Size:38K _sanyo
Ordering number : EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-
5.1. 2sj668.pdf Size:204K _toshiba
2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -
5.2. 2sj669.pdf Size:209K _toshiba
2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to
5.3. 2sj665.pdf Size:38K _sanyo
Ordering number : EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to
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