2SJ215 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ215Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PD1G231. Gate 2. Drain (Flange) S3. Source2SJ2

2SJ218Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutline2SJ218Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 60 V

2SJ216Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device_ Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PFMDG1231. Gate 2. Drain 3. SourceS2SJ216Absolut

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Pa

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet 2SJ210C R07DS1278EJ0200Rev.2.00P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10

SMD Type MOSFETP-Channel MOSFET2SJ2131.70 0.1 Features VDS (V) =-100V ID =-0.5 A0.42 0.10.46 0.1 RDS(ON) 4.2 (VGS =-10V) RDS(ON) 5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5A

SMD Type MOSFETP-Channel MOSFET2SJ211SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V1 2+0.02 ID =-0.2 A +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-60V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 10 (VGS =-10V) +0.11.9-0.1 RDS(ON) 15 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 15 (VGS =-4V)+0.11.9-0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

SMD Type MOSFETP-Channel MOSFET2SJ211SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-100V1 2 ID =-0.2 A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS

SMD Type MOSFETP-Channel MOSFET2SJ2121.70 0.1 Features VDS (V) =-60V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5A Pul