2SJ601-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

2SJ601-Zwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter S

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

Ordering number : ENN69952SJ608P-Channel Silicon MOSFET2SJ608Ultrahigh Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh speed switching. 2085A Low-voltage drive.[2SJ608]4.5 Mounting height 9.5mm.1.9 2.610.5 Meets radial taping. 1.2 1.41.20.51.60.51 2 31 : Source2 : Drain3 : GateSpecificati

Ordering number : ENN66712SJ609P-Channel Silicon MOSFET2SJ609DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2190 4V drive.[2SJ609]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Source1 2 32 : Drain3 : Gate2.44.8 SANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta=25

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ602SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ602 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ602 TO-220AB2SJ602-S TO-262FEATURES2SJ602-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 73 m MAX. (VGS = -10 V, ID = -10 A) 2S

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ603SWITCHINGP-CHANNEL POWER MOS FETORDERING INFORMATIONDESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ603 TO-220AB2SJ603-S TO-262FEATURES2SJ603-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) 2

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ604SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ604 TO-220AB2SJ604-S TO-262FEATURES2SJ604-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -23 A) 2S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ605SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ605 TO-220AB2SJ605-S TO-262FEATURES2SJ605-ZJ TO-263 Super low on-state resistance:2SJ605-Z TO-220SMDNoteRDS(on)1 = 20

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ607SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ607 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ607 TO-220AB2SJ607-S TO-262FEATURES2SJ607-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ600SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ600 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ600 TO-2512SJ600-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ606SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ606 TO-220AB2SJ606-S TO-262FEATURES2SJ606-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A

SMD Type MOSFETP-Channel MOSFET2SJ604-ZJ Features VDS (V) =-60V ID =-45A RDS(ON) 30m (VGS =-10V ) RDS(ON) 43m (VGS =-4V) Low Ciss: Ciss = 3300 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

SMD Type MOSFETP-Channel MOSFET2SJ607-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 11m (VGS =-10V) RDS(ON) 16m (VGS =-4V) Low Ciss: Ciss = 7500 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

SMD Type MOSFETP-Channel MOSFET2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss: Ciss = 4600 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

SMD Type MOSFETP-Channel MOSFET2SJ606-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 15m (VGS =-10V) RDS(ON) 23m (VGS =-4V) Low Ciss: Ciss = 4800 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

SMD Type MOSFETP-Channel MOSFET2SJ602-ZJ Features VDS (V) =-60V ID =-20A RDS(ON) 73m (VGS =-10V) RDS(ON) 107m (VGS =-4V) Low Ciss: Ciss = 1300 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 2

SMD Type MOSFETP-Channel MOSFET2SJ600-ZTO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) =-60V ID =-25A RDS(ON) 50m (VGS =-10V)0.127+0.10.80-0.1 RDS(ON) 79m (VGS =-4V)max Low Ciss: Ciss = 1900 pF (TYP.)+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceDrainBody

SMD Type MOSFETP-Channel MOSFET2SJ603-ZJ Features VDS (V) =-60V ID =-25A RDS(ON) 48m (VGS =-10V) RDS(ON) 75m (VGS =-4V) Low Ciss: Ciss = 1900 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20