IRFBF20S Todos los transistores

 

IRFBF20S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFBF20S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38(max) nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO263
 

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IRFBF20S Datasheet (PDF)

 ..1. Size:391K  international rectifier
 irfbf20spbf irfbf20lpbf.pdf pdf_icon

IRFBF20S

PD - 95547IRFBF20S/LPbF Lead-Free7/22/04Document Number: 91121 www.vishay.com1IRFBF20S/LPbFDocument Number: 91121 www.vishay.com2IRFBF20S/LPbFDocument Number: 91121 www.vishay.com3IRFBF20S/LPbFDocument Number: 91121 www.vishay.com4IRFBF20S/LPbFDocument Number: 91121 www.vishay.com5IRFBF20S/LPbFDocument Number: 91121 www.vishay.com6IRFBF20S/LPbF

 ..2. Size:311K  international rectifier
 irfbf20s irfbf20l.pdf pdf_icon

IRFBF20S

PD - 9.1665IRFBF20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBF20S)D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt RatingRDS(on) = 8.0 150C Operating TemperatureG Fast SwitchingID = 1.7A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

 ..3. Size:270K  vishay
 irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf pdf_icon

IRFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs

 ..4. Size:296K  vishay
 irfbf20spbf sihfbf20l sihfbf20s.pdf pdf_icon

IRFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs

MOSTRAR MÁS

Otros transistores... IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , RU7088R , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 .

History: IRFB9N60A | SM6128NSUB

 

 
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