IRFBF20S Todos los transistores

 

IRFBF20S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFBF20S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de IRFBF20S MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFBF20S datasheet

 ..1. Size:391K  international rectifier
 irfbf20spbf irfbf20lpbf.pdf pdf_icon

IRFBF20S

PD - 95547 IRFBF20S/LPbF Lead-Free 7/22/04 Document Number 91121 www.vishay.com 1 IRFBF20S/LPbF Document Number 91121 www.vishay.com 2 IRFBF20S/LPbF Document Number 91121 www.vishay.com 3 IRFBF20S/LPbF Document Number 91121 www.vishay.com 4 IRFBF20S/LPbF Document Number 91121 www.vishay.com 5 IRFBF20S/LPbF Document Number 91121 www.vishay.com 6 IRFBF20S/LPbF

 ..2. Size:311K  international rectifier
 irfbf20s irfbf20l.pdf pdf_icon

IRFBF20S

PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBF20S) D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating RDS(on) = 8.0 150 C Operating Temperature G Fast Switching ID = 1.7A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer

 ..3. Size:270K  vishay
 irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf pdf_icon

IRFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

 ..4. Size:296K  vishay
 irfbf20spbf sihfbf20l sihfbf20s.pdf pdf_icon

IRFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

MOSTRAR MÁS

Otros transistores... IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFZ48N , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 .

 

 

 


 
↑ Back to Top
.