2SJ605-Z Todos los transistores

 

2SJ605-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ605-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 87 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO263

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2SJ605-Z Datasheet (PDF)

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SMD Type MOSFETP-Channel MOSFET2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss: Ciss = 4600 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ605SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ605 TO-220AB2SJ605-S TO-262FEATURES2SJ605-ZJ TO-263 Super low on-state resistance:2SJ605-Z TO-220SMDNoteRDS(on)1 = 20

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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