2SJ245S Todos los transistores

 

2SJ245S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ245S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 315 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO252

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2SJ245S Datasheet (PDF)

4.1. 2sj245.pdf Size:227K _hitachi

2SJ245S
2SJ245S

www.DataSheet4U.com 2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 1 2 3 • Low on–resistance • High speed switching 2, 4 • Low drive current • 4 V Gate drive device can be driven 1 from 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drai

4.2. 2sj245l-s.pdf Size:36K _hitachi

2SJ245S
2SJ245S

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 1 2 3 • Low on–resistance • High speed switching 2, 4 • Low drive current • 4 V Gate drive device can be driven 1 from 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute M

 5.1. 2sj240.pdf Size:502K _upd

2SJ245S
2SJ245S



5.2. 2sj241.pdf Size:200K _upd

2SJ245S
2SJ245S



 5.3. rej03g0854 2sj247ds.pdf Size:95K _renesas

2SJ245S
2SJ245S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. rej03g0855 2sj248ds.pdf Size:95K _renesas

2SJ245S
2SJ245S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.5. 2sj247.pdf Size:81K _renesas

2SJ245S
2SJ245S

2SJ247 Silicon P Channel MOS FET REJ03G0854-0200 (Previous: ADE-208-1188) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name

5.6. 2sj248.pdf Size:81K _renesas

2SJ245S
2SJ245S

2SJ248 Silicon P Channel MOS FET REJ03G0855-0200 (Previous: ADE-208-1189) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name

5.7. 2sj244.pdf Size:76K _renesas

2SJ245S
2SJ245S

2SJ244 Silicon P Channel MOS FET REJ03G0853-0200 (Previous: ADE-208-1187) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very Low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK )

5.8. 2sj246l-s.pdf Size:44K _hitachi

2SJ245S
2SJ245S

2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 1 2 3 1 2 3 • Low on–resistance • High speed switching 2, 4 • Low drive current • 4V gate drive device can be driven from 1 5V source. 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain 3. Source converter 3 4. Drain Table 1 Absolute Maximu

5.9. 2sj244.pdf Size:1093K _kexin

2SJ245S
2SJ245S

SMD Type MOSFET P-Channel MOSFET 2SJ244 1.70 0.1 ■ Features ● VDS (V) =-12V D ● ID =-2 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 0.8Ω (VGS =-4V) G ● RDS(ON) < 0.9Ω (VGS =-2.5V) 1.Gate 2.Drain 3.Source S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±7 Continuous Drain Current ID -2

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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