2SJ280S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ280S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET 2SJ280S

2SJ280S Datasheet (PDF)

8.1. Size:121K hitachi
2sj280l-s.pdf

2SJ280 L , 2SJ280 SSilicon P Channel MOS FETApplicationLDPAKHigh speed power switching44Features1 Low onresistance 21 3 High speed switching 232, 4 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings4. Drain3Ta

9.1. Size:81K sanyo
2sj284.pdf

Ordering number:EN4220P-Channel Silicon MOSFET2SJ284Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ284]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

9.2. Size:41K sanyo
2sj289.pdf

Ordering number : ENN66092SJ289P-Channel Silicon MOSFET2SJ289Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive.[2SJ289]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ratings at Ta=25CPa

9.3. Size:93K sanyo
2sj281.pdf

Ordering number:EN4243AP-Channel Silicon MOSFET2SJ281Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ281]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ281]6.5 2.35.0 0.540.50

9.4. Size:96K sanyo
2sj287.pdf

Ordering number:EN4307P-Channel Silicon MOSFET2SJ287Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ287]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25

9.5. Size:99K sanyo
2sj288.pdf

Ordering number:EN4308P-Channel Silicon MOSFET2SJ288Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ288]4.51.51.60.40.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 2

9.6. Size:106K sanyo
2sj285.pdf

Ordering number:EN4221P-Channel Silicon MOSFET2SJ285Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ285]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

9.7. Size:1039K kexin
2sj287.pdf

SMD Type MOSFETP-Channel MOSFET2SJ2871.70 0.1 Features VDS (V) =-30V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 2.2 (VGS =-10V) RDS(ON) 3.3 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A

9.8. Size:1053K kexin
2sj288.pdf

SMD Type MOSFETP-Channel MOSFET2SJ2881.70 0.1 Features VDS (V) =-60V ID =-0.5 A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A Puls

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