2SJ295 Todos los transistores

 

2SJ295 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ295
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: TO220FM
 

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2SJ295 Datasheet (PDF)

 ..1. Size:31K  hitachi
 2sj295.pdf pdf_icon

2SJ295

2SJ295Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ295Absolute Ma

 9.1. Size:22K  hitachi
 2sj292.pdf pdf_icon

2SJ295

2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292

 9.2. Size:25K  hitachi
 2sj294.pdf pdf_icon

2SJ295

2SJ294Silicon P Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current123 4 V gate drive device can be driven from15 V source Suitable for Switching regulator, DC DC 1. Gateconverter2. Drain Avalanche Ratings3. Source3Table 1 Absolute Maximum Ratings (T

 9.3. Size:30K  hitachi
 2sj293.pdf pdf_icon

2SJ295

2SJ293Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ293Absolute Ma

MOSTRAR MÁS

Otros transistores... 2SJ246S , 2SJ279L , 2SJ279S , 2SJ280L , 2SJ280S , 2SJ292 , 2SJ293 , 2SJ294 , IRFP250 , 2SJ494 , 2SJ495 , 2SJ498 , 2SJ557A , 2SJ472-01L , 2SJ472-01S , 2SJ473-01L , 2SJ473-01S .

History: HTD1K5N10 | QM3014M6 | BL7N60A-D

 

 
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