2SJ295 Todos los transistores

 

2SJ295 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ295

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 170 nS

Cossⓘ - Capacitancia de salida: 1500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm

Encapsulados: TO220FM

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2SJ295 datasheet

 ..1. Size:31K  hitachi
 2sj295.pdf pdf_icon

2SJ295

2SJ295 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ295 Absolute Ma

 9.1. Size:22K  hitachi
 2sj292.pdf pdf_icon

2SJ295

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292

 9.2. Size:25K  hitachi
 2sj294.pdf pdf_icon

2SJ295

2SJ294 Silicon P Channel MOS FET Application TO 220FM High speed power switching Features Low on resistance High speed switching 2 Low drive current 1 2 3 4 V gate drive device can be driven from 1 5 V source Suitable for Switching regulator, DC DC 1. Gate converter 2. Drain Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T

 9.3. Size:30K  hitachi
 2sj293.pdf pdf_icon

2SJ295

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma

MOSTRAR MÁS

Otros transistores... 2SJ246S , 2SJ279L , 2SJ279S , 2SJ280L , 2SJ280S , 2SJ292 , 2SJ293 , 2SJ294 , AON7506 , 2SJ494 , 2SJ495 , 2SJ498 , 2SJ557A , 2SJ472-01L , 2SJ472-01S , 2SJ473-01L , 2SJ473-01S .

 

 

 

 

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