2SJ498 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Ordering number ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Package Dimensions Low ON-state resistance. unit mm 4V drive. 2083B [2SJ499] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ499] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 Gat

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D

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Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Pack

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ493 Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor (in millimeter) designed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 30 m MAX. (VGS = 10 V, ID =

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for DC/DC converters and motor/lamp driver 2SJ492 TO-220AB circuits. 2SJ492-S TO-262 2SJ492-ZJ TO-263 FEATURES Low on-state resistance RDS(on)1 = 100 m (MAX.) (VG

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m Max. (VGS = 10 V, ID = 1

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SMD Type MOSFET P-Channel MOSFET 2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss Ciss = 1210 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V VGS(AC) 20 Gate-Sourc

SMD Type MOSFET MOS Field Effect Transistor 2SJ492 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) +0.1 Low Ciss Ciss = 1210 pF (TYP.) 0.1max 1.27-0.1 Built-in gate protection diode +0.1 0.81-0.1 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2D