2SJ314-01L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ314-01L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 20 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET 2SJ314-01L
2SJ314-01L Datasheet (PDF)
2sj314-01l-s.pdf
FUJI POWER MOSFET2SJ314-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeEIAJMaximum ratings and characterist
2sj313.pdf
2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS
2sj312.pdf
2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ312 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo
2sj315.pdf
2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ315 DC-DC Converter Unit: mm FEATURES 4- Volt gate drive Low drain-source ON resistance : R = 0.25 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -1
2sj316.pdf
Ordering number:EN4309P-Channel Silicon MOSFET2SJ316Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ316]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25
2sj317.pdf
2SJ317 Silicon P Channel MOS FET REJ03G0857-0200 (Previous: ADE-208-1191) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-AR(Package name:
r07ds0396ej 2sj319ls.pdf
Preliminary Datasheet R07DS0396EJ03002SJ319(L), 2SJ319(S) (Previous: REJ03G0858-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0
2sj319.pdf
2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous: ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package
2sj319s.pdf
SMD Type MOSFETP-Channel MOSFET2SJ319STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-200V ID =-3 A (VGS =-10V)0.127D+0.10.80-0.1max RDS(ON) 2.3 (VGS =-10V)G High speed switching Low drive current+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 SourceS4 Drain
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