2SJ325-Z Todos los transistores

 

2SJ325-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ325-Z

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 65 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: TO252

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2SJ325-Z Datasheet (PDF)

1.1. 2sj325-z.pdf Size:384K _upd

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4.1. 2sj325.pdf Size:386K _nec

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 5.1. 2sj324-z.pdf Size:1872K _upd

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj328-z.pdf Size:341K _upd

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 5.3. 2sj326-z.pdf Size:384K _upd

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5.4. 2sj327-z.pdf Size:342K _upd

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 5.5. 2sj320.pdf Size:94K _sanyo

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Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ320] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.6. 2sj327.pdf Size:346K _nec

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5.7. 2sj324.pdf Size:344K _nec

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5.8. 2sj326.pdf Size:386K _nec

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5.9. 2sj328.pdf Size:346K _nec

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5.10. 2sj329.pdf Size:343K _nec

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Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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