2SJ461A Todos los transistores

 

2SJ461A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ461A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 7 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 270 nS

Cossⓘ - Capacitancia de salida: 9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm

Encapsulados: SC59

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2SJ461A datasheet

 ..1. Size:723K  nec
2sj461a.pdf pdf_icon

2SJ461A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit mm) Can be driven by a

 8.1. Size:711K  nec
2sj461.pdf pdf_icon

2SJ461A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device

 8.2. Size:1139K  kexin
2sj461-3.pdf pdf_icon

2SJ461A

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-50V 1 2 ID =-0.1 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 50 (VGS =-4V) 1.9 -0.2 RDS(ON) 100 (VGS =-2.5V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag

 8.3. Size:1130K  kexin
2sj461.pdf pdf_icon

2SJ461A

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V 1 2 ID =-0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1 -0.1 RDS(ON) 100 (VGS =-2.5V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS

Otros transistores... 2SJ355 , 2SJ357 , 2SJ358 , 2SJ358C , 2SJ389L , 2SJ389S , 2SJ409L , 2SJ409S , RU7088R , 2SJ475-01 , 2SJ476-01L , 2SJ476-01S , 2SJ477-01MR , AO3451 , AO3452 , AO3453 , AO3454 .

History: VSO008N10MS | FDB075N15AF085 | STFU9N65M2 | TPM7002BKM

 

 

 

 

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