AOD607A Todos los transistores

 ..1. Size:563K  aosemi
 aod607a.pdf

AOD607A 30V Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:209K  aosemi
 aod607.pdf

 9.1. Size:524K  aosemi
 aod609g.pdf

AOD609G Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609G uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)

 9.2. Size:486K  aosemi
 aod600a60 aoi600a60.pdf

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:660K  aosemi
 aod600a70 aoi600a70.pdf

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.4. Size:486K  aosemi
 aod600a60.pdf

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 9.5. Size:269K  aosemi
 aod609.pdf

AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)

 9.6. Size:239K  aosemi
 aod606.pdf

AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 40V -40V excellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

 9.7. Size:392K  aosemi
 aod603a.pdf

AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel P-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate VDS= 60V -60V charge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V) used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

 9.8. Size:904K  aosemi
 aod600a70r.pdf

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.9. Size:904K  aosemi
 aod600a70r aoi600a70r.pdf

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.10. Size:660K  aosemi
 aod600a70.pdf

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.11. Size:940K  cn vbsemi
 aod603a.pdf

AOD603A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 10 V 35 TrenchFET Power MOSFET N-Channel 60 6 nC 0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 19 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS = -