AOD2610E Todos los transistores

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 aod2610e aoi2610e aoy2610e.pdf

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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 aod2610e.pdf

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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 aod2610e.pdf

isc N-Channel MOSFET Transistor AOD2610E FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

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 aod2610.pdf

AOD2610 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

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 aod2610.pdf

AOD2610 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Un

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 aod2610.pdf

Isc N-Channel MOSFET Transistor AOD2610 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag