AOD2910E Todos los transistores

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 aod2910e.pdf

AOD2910E 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

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 aod2910e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2910E FEATURES With TO-252( DPAK ) packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Industrial and motor drive applications DC/DC and AC/DC conver

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 aod2910.pdf

AOD2910 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 31A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 7.2. Size:249K  inchange semiconductor
 aod2910.pdf

isc N-Channel MOSFET Transistor AOD2910 FEATURES Drain Current I = 31A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

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 aod2916.pdf

AOD2916 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 25A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:265K  inchange semiconductor
 aod2916.pdf

isc N-Channel MOSFET Transistor AOD2916 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =34m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose