AOI2614 Datasheet. Equivalente

 ..1. Size:273K  inchange semiconductor
 aoi2614.pdf

isc N-Channel MOSFET Transistor AOI2614 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R =16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 8.1. Size:411K  aosemi
 aod2610e aoi2610e aoy2610e.pdf

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:411K  aosemi
 aoi2610e.pdf

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:267K  aosemi
 aoi2610.pdf

AOD2610/AOI2610 60V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:273K  inchange semiconductor
 aoi2610e.pdf

isc N-Channel MOSFET Transistor AOI2610E FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.5. Size:274K  inchange semiconductor
 aoi2610.pdf

isc N-Channel MOSFET Transistor AOI2610 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos