AOL1454G Todos los transistores

 

AOL1454G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOL1454G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 46 A

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 245 pF

Resistencia drenaje-fuente RDS(on): 0.0059 Ohm

Empaquetado / Estuche: UltraSO8

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AOL1454G Datasheet (PDF)

1.1. aol1454g.pdf Size:370K _aosemi

AOL1454G
AOL1454G

AOL1454G TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A • Low RDS(ON) • Logic Level Driving RDS(ON) (at VGS=10V) < 5.9mΩ • Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=4.5V) < 9.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested •

3.1. aol1454.pdf Size:224K _aosemi

AOL1454G
AOL1454G

AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD VDS (V) = 40V protected. This device is suitable for use as a low side ID = 50A (VGS = 10V) switch in SMPS and general purpose applications. RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V)

 4.1. aol1458.pdf Size:256K _aosemi

AOL1454G
AOL1454G

AOL1458 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AOL1458 is fabricated with SDMOSTM trench ID (at VGS=10V) 46A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 5.6mΩ with controlled switching behavior. This universal RDS(ON) (at VGS = 4.5V) < 9.5mΩ tec

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