AON5802BG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON5802BG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: DFN2X5
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AON5802BG datasheet
aon5802bg.pdf
AON5802BG 30V Dual N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)
aon5802b.pdf
AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)
aon5802a.pdf
AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u
aon5802.pdf
AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON)
Otros transistores... AOI2614, AOI66406, AOK60N30L, AOL1404G, AOL1454G, AON2392, AON3414, AON3820, 2N60, AON5816, AON6144, AON6152, AON6154, AON6156, AON6160, AON6162, AON6224
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