2N7224 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7224  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 max nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO254

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2N7224 datasheet

 ..1. Size:64K  omnirel
 2n7224 2n7225 2n7227 2n7228.pdf pdf_icon

2N7224

2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L

 ..2. Size:23K  semelab
 2n7224 irfm150.pdf pdf_icon

2N7224

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0

 0.1. Size:165K  international rectifier
 2n7224u.pdf pdf_icon

2N7224

PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 34A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 9.1. Size:271K  international rectifier
 2n7227u.pdf pdf_icon

2N7224

PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 14A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi

MOSTRAR MÁS

Otros transistores... 2N7123, 2N7124, 2N7125, 2N7126, 2N7218, 2N7219, 2N7220, 2N7221, K3569, 2N7225, 2N7227, 2N7227JV, 2N7227JX, 2N7228, 2N7228JV, 2N7228JX, 2N7236