AON6984 Datasheet. Equivalente

 ..1. Size:350K  aosemi
 aon6984.pdf

AON6984 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:353K  aosemi
 aon6982.pdf

AON6982 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:481K  aosemi
 aon6980.pdf

AON6980 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power AlphaMOS ( MOS LV) technology Low RDS(ON) ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:350K  aosemi
 aon6998.pdf

AON6998 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:476K  aosemi
 aon6978.pdf

AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:434K  aosemi
 aon6924.pdf

 9.4. Size:705K  aosemi
 aon6936.pdf

AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)

 9.5. Size:529K  aosemi
 aon6970.pdf

AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)

 9.6. Size:648K  aosemi
 aon6974.pdf

AON6974 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:520K  aosemi
 aon6934.pdf

AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

 9.8. Size:487K  aosemi
 aon6946.pdf

AON6946 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5V VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

 9.9. Size:369K  aosemi
 aon6926.pdf

AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1

 9.10. Size:394K  aosemi
 aon6918.pdf

AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 9.11. Size:490K  aosemi
 aon6996.pdf

AON6996 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V)

 9.12. Size:387K  aosemi
 aon6922.pdf

AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 9.13. Size:551K  aosemi
 aon6938.pdf

AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)

 9.14. Size:353K  aosemi
 aon6992.pdf

AON6992 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.15. Size:394K  aosemi
 aon6920.pdf

AON6920 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 9.16. Size:482K  aosemi
 aon6973a.pdf

AON6973A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.17. Size:482K  aosemi
 aon6974a.pdf

AON6974A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.18. Size:431K  aosemi
 aon6908a.pdf

AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)

 9.19. Size:545K  aosemi
 aon6912a.pdf

AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)

 9.20. Size:349K  aosemi
 aon6994.pdf

AON6994 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

 9.21. Size:562K  aosemi
 aon6906.pdf

AON6906 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906 is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

 9.22. Size:566K  aosemi
 aon6912.pdf

AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 9.23. Size:471K  aosemi
 aon6908.pdf

AON6908 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 9.24. Size:503K  aosemi
 aon6932.pdf

AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 9.25. Size:424K  aosemi
 aon6910a.pdf

AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is

 9.26. Size:616K  aosemi
 aon6932a.pdf

AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 9.27. Size:601K  aosemi
 aon6928.pdf

AON6928 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)

 9.28. Size:370K  aosemi
 aon6906a.pdf

AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

 9.29. Size:633K  aosemi
 aon6934a.pdf

AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)