AON7422G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON7422G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: DFN3X3EP

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AON7422G datasheet

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AON7422G

AON7422G 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

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AON7422G

AON7422E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 7.2. Size:164K  aosemi
 aon7422l.pdf pdf_icon

AON7422G

AON7422 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

 7.3. Size:1620K  cn vbsemi
 aon7422l.pdf pdf_icon

AON7422G

AON7422L www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Industri

MOSTRAR MÁS

Otros transistores... AON7230, AON7232, AON7246E, AON7262E, AON7264E, AON7318, AON7380, AON7404G, IRF9540N, AON7442, AON7518, AON7566, AON7568, AONE36132, AONE36182, AONR21307, AONR21357