AP75T10BGP Todos los transistores

 

AP75T10BGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP75T10BGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.5 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220

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AP75T10BGP datasheet

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AP75T10BGP

AP75T10BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP75T10B series are from Advanced Power innovat

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AP75T10BGP

AP75T10BGP www.VBsemi.tw N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.010 at VGS = 6 V 85 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise note

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ap75t10bgp-hf.pdf pdf_icon

AP75T10BGP

AP75T10BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugge

 7.1. Size:162K  ape
ap75t10gi.pdf pdf_icon

AP75T10BGP

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description AP75T10 series are from Advanced Power innovated design and silicon process technology to achie

Otros transistores... AP09N90CW , AP3990R , AP16N50P , AP80T10GP , AP80T10GR , AP09N70R-A , AP3989R , AP98T03GS , IRF640 , AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP .

History: NCEP60T18 | H10N60E | 2SK1566 | IXFE39N90 | 2SK161 | LSB60R280HT

 

 

 

 

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