AP85T03GS Todos los transistores

 

AP85T03GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP85T03GS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de AP85T03GS MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP85T03GS datasheet

 ..1. Size:163K  ape
ap85t03gs.pdf pdf_icon

AP85T03GS

AP85T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description G D AP85T03 series are from Advanced Power inno

 ..2. Size:99K  ape
ap85t03gs p-hf.pdf pdf_icon

AP85T03GS

AP85T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description G The TO-263 package is widely preferred for all commercial-industrial D S TO-263(S) surface mount applic

 6.1. Size:98K  ape
ap85t03gh-hf ap85t03gj-hf.pdf pdf_icon

AP85T03GS

AP85T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suite

 6.2. Size:216K  ape
ap85t03gj.pdf pdf_icon

AP85T03GS

AP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 6m Fast Switching ID 75A G S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such

Otros transistores... AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , 10N60 , AP2761S-A , AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP .

History: LR024N

 

 

 


History: LR024N

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor | 2sa1302

 

 

↑ Back to Top
.