AP15P10GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15P10GH
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP15P10GH MOSFET
- Selecciónⓘ de transistores por parámetros
AP15P10GH datasheet
ap15p10gh.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount app
ap15p10gp ap15p10gs.pdf
AP15P10GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r
Otros transistores... AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP , AON7408 , AP15P10GJ , AP25N10GH , AP9120GH , AP2762R-A , AP9972GH , AP15P15GH , AP20N15AGH , AP20N15GH .
History: NTD60N03-001 | FDMQ8203 | IRLML2502PBF-1 | 2SK1521 | WMQ30N02T1 | CS12N60FA9R | STM8020
History: NTD60N03-001 | FDMQ8203 | IRLML2502PBF-1 | 2SK1521 | WMQ30N02T1 | CS12N60FA9R | STM8020
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Recientemente añadidas las descripciónes de los transistores:
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