AP15P10GJ Todos los transistores

 

AP15P10GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP15P10GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: TO251
 

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AP15P10GJ Datasheet (PDF)

 ..1. Size:205K  ape
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AP15P10GJ

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology

 ..2. Size:832K  cn vbsemi
ap15p10gj.pdf pdf_icon

AP15P10GJ

AP15P10GJwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Conv

 0.1. Size:100K  ape
ap15p10gh-hf ap15p10gj-hf.pdf pdf_icon

AP15P10GJ

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount app

 6.1. Size:236K  ape
ap15p10gh.pdf pdf_icon

AP15P10GJ

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology

Otros transistores... AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP , AP15P10GH , IRFP260 , AP25N10GH , AP9120GH , AP2762R-A , AP9972GH , AP15P15GH , AP20N15AGH , AP20N15GH , AP18N20GS .

History: CHM6338JGP | 2SK784 | AON6816 | AFP7617WS | CEM3258

 

 
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