AP15P10GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15P10GJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de AP15P10GJ MOSFET
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AP15P10GJ datasheet
ap15p10gj.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology
ap15p10gj.pdf
AP15P10GJ www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11 0.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Conv
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount app
ap15p10gh.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology
Otros transistores... AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP , AP15P10GH , 2SK3878 , AP25N10GH , AP9120GH , AP2762R-A , AP9972GH , AP15P15GH , AP20N15AGH , AP20N15GH , AP18N20GS .
History: 2SK1507-01MR | 2SJ183 | 2SJ683 | TMP4N65Z | H06N60F
History: 2SK1507-01MR | 2SJ183 | 2SJ683 | TMP4N65Z | H06N60F
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