AP9972GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9972GH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP9972GH MOSFET
- Selecciónⓘ de transistores por parámetros
AP9972GH datasheet
ap9972gh.pdf
AP9972GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
ap9972gh-hf.pdf
AP9972GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge
ap9972gs.pdf
AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th
ap9972gp.pdf
AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th
Otros transistores... AP9974GJ , AP9974GP , AP08P20GP , AP15P10GH , AP15P10GJ , AP25N10GH , AP9120GH , AP2762R-A , IRF4905 , AP15P15GH , AP20N15AGH , AP20N15GH , AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP .
History: AP8N8R0H | SGSP330
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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