AP20N15AGH Todos los transistores

 

AP20N15AGH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20N15AGH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO252

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AP20N15AGH datasheet

 ..1. Size:234K  ape
 ap20n15agh.pdf pdf_icon

AP20N15AGH

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching,

 0.1. Size:94K  ape
 ap20n15agh-hf.pdf pdf_icon

AP20N15AGH

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 5.1. Size:60K  ape
 ap20n15agi-hf.pdf pdf_icon

AP20N15AGH

AP20N15AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description AP20N15A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 5.2. Size:96K  ape
 ap20n15agp-hf.pdf pdf_icon

AP20N15AGH

AP20N15AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

MOSTRAR MÁS

Otros transistores... AP08P20GP , AP15P10GH , AP15P10GJ , AP25N10GH , AP9120GH , AP2762R-A , AP9972GH , AP15P15GH , AO3401 , AP20N15GH , AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP , AP9972GP , AP9972GS .

History: AP8N8R0MT

 

 

 

 

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