AP20N15GH Todos los transistores

 

AP20N15GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20N15GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

AP20N15GH Datasheet (PDF)

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 ap20n15gh.pdf pdf_icon

AP20N15GH

AP20N15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS Compliant & Halogen-FreeSDescriptionAP20N15 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve

 0.1. Size:94K  ape
 ap20n15gh-hf.pdf pdf_icon

AP20N15GH

AP20N15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDS TO-252(H)designer with the best combination of fast

 6.1. Size:212K  ape
 ap20n15gi.pdf pdf_icon

AP20N15GH

AP20N15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 150V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP20N15 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 6.2. Size:94K  ape
 ap20n15gi-hf.pdf pdf_icon

AP20N15GH

AP20N15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 150VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H

 

 
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