AP70T15GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP70T15GI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP70T15GI MOSFET
- Selecciónⓘ de transistores por parámetros
AP70T15GI datasheet
ap70t15gi.pdf
AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap70t15gi-hf.pdf
AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap70t15gp-hf.pdf
AP70T15GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap70t03gi.pdf
AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Otros transistores... AP9972GS , AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , NCEP15T14 , AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H , AP03N70H , AP03N70J .
History: SSI3N80A | 2SK3573-S | IXFK55N50F | WMM80R1K0S | LSC65R380GT | AP3P080N | AP2301EN-HF
History: SSI3N80A | 2SK3573-S | IXFK55N50F | WMM80R1K0S | LSC65R380GT | AP3P080N | AP2301EN-HF
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet
