AP70T15GI Todos los transistores

 

AP70T15GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T15GI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO220F

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AP70T15GI datasheet

 ..1. Size:209K  ape
ap70t15gi.pdf pdf_icon

AP70T15GI

AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 0.1. Size:93K  ape
ap70t15gi-hf.pdf pdf_icon

AP70T15GI

AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 6.1. Size:96K  ape
ap70t15gp-hf.pdf pdf_icon

AP70T15GI

AP70T15GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.1. Size:121K  ape
ap70t03gi.pdf pdf_icon

AP70T15GI

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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History: SSI3N80A | 2SK3573-S | IXFK55N50F | WMM80R1K0S | LSC65R380GT | AP3P080N | AP2301EN-HF

 

 

 

 

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