AP3P9R0H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P9R0H
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 63 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO252
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AP3P9R0H Datasheet (PDF)
ap3p9r0h.pdf
AP3P9R0HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowe
ap3p9r0p.pdf
AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos
ap3p9r0i.pdf
AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
ap3p9r0jb.pdf
AP3P9R0JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po
Otros transistores... AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H , AP03N70H , AP03N70J , IRF1407 , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , AP9561GJ , AP70T03GJ .
History: JMSH0803MC | RU7N65L
History: JMSH0803MC | RU7N65L
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