AP0904GH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0904GH  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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AP0904GH datasheet

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AP0904GH

AP0904GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51A G RoHS Compliant & Halogen-Free S Description G AP0904 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to ac

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AP0904GH

AP0904GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

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AP0904GH

AP0904GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40V D Small Size & Lower Profile RDS(ON) 11.5m RoHS Compliant & Halogen-Free ID 13.5A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device d

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AP0904GH

AP0904GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description AP0904 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

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