AP75T10GI Todos los transistores

 

AP75T10GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP75T10GI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AP75T10GI Datasheet (PDF)

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 ap75t10gi.pdf pdf_icon

AP75T10GI

AP75T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42AGSDescriptionAP75T10 series are from Advanced Power innovated design andsilicon process technology to achie

 0.1. Size:57K  ape
 ap75t10gi-hf.pdf pdf_icon

AP75T10GI

AP75T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res

 6.1. Size:225K  ape
 ap75t10gs.pdf pdf_icon

AP75T10GI

AP75T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDSo

 6.2. Size:200K  ape
 ap75t10gp.pdf pdf_icon

AP75T10GI

AP75T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, rugge

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RF4E080BN | HY4306W | DMN4010LFG | AP65SL145AFI | IRLU8721 | AO4724 | 2SK3510-ZJ

 

 
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