AP75T10GI Todos los transistores

 

AP75T10GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP75T10GI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220F

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AP75T10GI datasheet

 ..1. Size:162K  ape
 ap75t10gi.pdf pdf_icon

AP75T10GI

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description AP75T10 series are from Advanced Power innovated design and silicon process technology to achie

 0.1. Size:57K  ape
 ap75t10gi-hf.pdf pdf_icon

AP75T10GI

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-res

 6.1. Size:225K  ape
 ap75t10gs.pdf pdf_icon

AP75T10GI

AP75T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S o

 6.2. Size:200K  ape
 ap75t10gp.pdf pdf_icon

AP75T10GI

AP75T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

MOSTRAR MÁS

Otros transistores... AP6679BGJ , AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , 2N60 , AP60T03GH , AP01N60J , AP9563GH , AP9563GJ , AP9971GP , AP9971GS , AP40T10GI , AP2764AI-A .

History: CJK3400AH | FTK80N10P | AP10TN135K

 

 

 

 

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