AP9997AGH Todos los transistores

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 ap9997agh.pdf

AP9997AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8A G RoHS Compliant & Halogen-Free S Description AP9997A series are from Advanced Power innovat

 0.1. Size:94K  ape
 ap9997agh-hf.pdf

AP9997AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) r

 8.1. Size:182K  ape
 ap9997gm.pdf

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge

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 ap9997gh-hf ap9997gj-hf.pdf

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast

 8.3. Size:94K  ape
 ap9997gk-hf.pdf

AP9997GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m S Fast Switching Characteristic ID 3.2A D Halogen Free & RoHS Compliant Product SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.4. Size:123K  ape
 ap9997bghj-hf.pdf

AP9997BGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 145m Fast Switching Characteristic ID 9.3A G Halogen Free & RoHS Compliant Product S Description AP9997B series are from Advanced Power innovated design and silicon G D process technology to

 8.5. Size:94K  ape
 ap9997gk.pdf

AP9997GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2A S D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and co

 8.6. Size:93K  ape
 ap9997gp-hf.pdf

AP9997GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resista

 8.7. Size:144K  ape
 ap9997gp.pdf

AP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistan

 8.8. Size:812K  cn vbsemi
 ap9997gk.pdf

AP9997GK www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABS

 8.9. Size:1435K  cn vbsemi
 ap9997gh.pdf

AP9997GH www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 8.10. Size:286K  inchange semiconductor
 ap9997gh.pdf

isc N-Channel MOSFET Transistor AP9997GH FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen