2N7227
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N7227
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 400
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 14
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 110(max)
nC
trⓘ - Tiempo de subida: 190(max)
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.315
Ohm
Paquete / Cubierta:
TO254
Búsqueda de reemplazo de MOSFET 2N7227
2N7227
Datasheet (PDF)
..1. Size:64K omnirel
2n7224 2n7225 2n7227 2n7228.pdf 
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/592100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
..2. Size:62K apt
2n7227.pdf
DTO-254G2N7227 400 Volt 0.315SJX2N7227*JV2N7227*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo
0.1. Size:271K international rectifier
2n7227u.pdf
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
9.1. Size:220K international rectifier
2n7221u.pdf
PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
9.2. Size:165K international rectifier
2n7224u.pdf
PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
9.3. Size:180K international rectifier
2n7228u.pdf
PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
9.4. Size:179K international rectifier
2n7222u.pdf
PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
9.6. Size:64K omnirel
2n7218 2n7219 2n7221 2n7222.pdf
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
9.7. Size:61K apt
2n7228.pdf
DTO-254G2N7228 500 Volt 0.415SJX2N7228*JV2N7228*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7228 UNITVDSS Drain-Source Voltage500VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C12IDCo
9.8. Size:23K semelab
2n7224 irfm150.pdf
2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0
9.9. Size:165K microsemi
2n7225u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C u
Otros transistores... 2N7125
, 2N7126
, 2N7218
, 2N7219
, 2N7220
, 2N7221
, 2N7224
, 2N7225
, 8N60
, 2N7227JV
, 2N7227JX
, 2N7228
, 2N7228JV
, 2N7228JX
, 2N7236
, 2N7237
, 2N7241
.
