AP9578GH Todos los transistores

 

AP9578GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9578GH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO252

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AP9578GH datasheet

 ..1. Size:232K  ape
ap9578gh.pdf pdf_icon

AP9578GH

AP9578GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description AP9578 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowest possible on- TO-252(H)

 ..2. Size:217K  ape
ap9578gh ap9578gj.pdf pdf_icon

AP9578GH

AP9578GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

 ..3. Size:100K  ape
ap9578gh j-hf.pdf pdf_icon

AP9578GH

AP9578GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description The TO-252 package is widely preferred for all commercial-industrial G D S surface mount applications and suited for low voltage applica

 7.1. Size:200K  ape
ap9578gs.pdf pdf_icon

AP9578GH

AP9578GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-263(S) ruggedized device d

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History: APS04N60H

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