AP3310GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP3310GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO252

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AP3310GH Datasheet (PDF)

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ap3310gh.pdf

AP3310GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AG RoHS Compliant & Halogen-FreeSDescriptionAP3310 series are from Advanced Power innovated design andsilicon process technology to achieve th

..2. Size:104K ape
ap3310gj ap3310gh.pdf

AP3310GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast switching, low on-resistan

0.1. Size:105K ape
ap3310gh-hf ap3310gj-hf.pdf

AP3310GH/J-HFRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDSTO-252(H)combination of fast switching, low on-resis

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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