AP6679BMT Todos los transistores

 

AP6679BMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6679BMT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19.1 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: PMPAK5X6
     - Selección de transistores por parámetros

 

AP6679BMT Datasheet (PDF)

 ..1. Size:200K  ape
 ap6679bmt.pdf pdf_icon

AP6679BMT

AP6679BMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Low On-resistance RDS(ON) 9m Simple Drive Requirement ID -60AG RoHS Compliant & Halogen-FreeSDDescriptionDDAP6679B series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest p

 7.1. Size:95K  ape
 ap6679bgm-hf.pdf pdf_icon

AP6679BMT

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

 7.2. Size:95K  ape
 ap6679bgi-hf.pdf pdf_icon

AP6679BMT

AP6679BGI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 7.3. Size:95K  ape
 ap6679bgp-hf.pdf pdf_icon

AP6679BMT

AP6679BGP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP4501GM-HF | FDD5N50NZ | FDS6892A | SI4800BDY | NTLJS4159NT1G | SSRF50P04-16 | WFW40N25W

 

 
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