AP10TN030M Todos los transistores

 

AP10TN030M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN030M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SO8

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AP10TN030M datasheet

 ..1. Size:222K  ape
 ap10tn030m.pdf pdf_icon

AP10TN030M

AP10TN030M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D D Low On-resistance RDS(ON) 30m Fast Switching Characteristic ID 6.5A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP10TN030 series are from Advanced Power innovated design and silicon process technol

 7.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN030M

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 7.2. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN030M

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

 7.3. Size:163K  ape
 ap10tn004lcmt.pdf pdf_icon

AP10TN030M

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach

MOSTRAR MÁS

Otros transistores... AP20T03GJ , AP4578GH , AP4430GM , AP9420GM , AP9408GM , AP0403GM , AP0603GM , AP0903GM , AON6414A , AP10TN135M , AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M .

History: IRF332

 

 

 

 

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