AP3N4R5M Todos los transistores

 

AP3N4R5M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N4R5M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.7 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: SO8
 

 Búsqueda de reemplazo de AP3N4R5M MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP3N4R5M Datasheet (PDF)

 ..1. Size:220K  ape
ap3n4r5m.pdf pdf_icon

AP3N4R5M

AP3N4R5MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Integrated SKY Diode D RDS(ON) 4.5mD Surface Mount Device ID3 18.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3N4R5 series are from Advanced Power innovated design andsilicon process technology to ac

 7.1. Size:203K  ape
ap3n4r5h.pdf pdf_icon

AP3N4R5M

AP3N4R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test BVDSS 30V Integrated SKY Diode RDS(ON) 4.5m Low On-resistanceG RoHS Compliant & Halogen-FreeSDescriptionGAP4604 series arefrom Advanced Power innovated designAP3N4R5 seriesare fromAdvanced Power innovated design andDSTO-252(H)a

 8.1. Size:204K  ape
ap3n4r0p.pdf pdf_icon

AP3N4R5M

AP3N4R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand

 8.2. Size:243K  ape
ap3n4r0h.pdf pdf_icon

AP3N4R5M

AP3N4R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designG

Otros transistores... AP10TN135M , AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , 2N7000 , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM , AP3P9R0M , AP4024EM , AP4028EM , AP4034GM .

History: IPI100N04S4-H2 | IPI100N10S3-05 | STD11NM50N | TPC8047-H | NTMFS6H801N | CS6N70CRHD | HCD70R910

 

 
Back to Top

 


 
.