AP3N4R5M Todos los transistores

 

AP3N4R5M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N4R5M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.7 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: SO8

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AP3N4R5M Datasheet (PDF)

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ap3n4r5m.pdf

AP3N4R5M
AP3N4R5M

AP3N4R5MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Integrated SKY Diode D RDS(ON) 4.5mD Surface Mount Device ID3 18.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3N4R5 series are from Advanced Power innovated design andsilicon process technology to ac

 7.1. Size:203K  ape
ap3n4r5h.pdf

AP3N4R5M
AP3N4R5M

AP3N4R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test BVDSS 30V Integrated SKY Diode RDS(ON) 4.5m Low On-resistanceG RoHS Compliant & Halogen-FreeSDescriptionGAP4604 series arefrom Advanced Power innovated designAP3N4R5 seriesare fromAdvanced Power innovated design andDSTO-252(H)a

 8.1. Size:204K  ape
ap3n4r0p.pdf

AP3N4R5M
AP3N4R5M

AP3N4R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand

 8.2. Size:243K  ape
ap3n4r0h.pdf

AP3N4R5M
AP3N4R5M

AP3N4R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designG

 8.3. Size:110K  ape
ap3n4r0s.pdf

AP3N4R5M
AP3N4R5M

AP3N4R0SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand

 8.4. Size:104K  ape
ap3n4r0j.pdf

AP3N4R5M
AP3N4R5M

AP3N4R0JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power i

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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History: 2SK3614

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