AP3P028LM Todos los transistores

 

AP3P028LM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P028LM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.7 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO8
 
   - Selección ⓘ de transistores por parámetros

 

AP3P028LM Datasheet (PDF)

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 ap3p028lm.pdf pdf_icon

AP3P028LM

AP3P028LMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 28m Capable of 2.5V Gate Drive ID3 -7.7AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P028L series are from Advanced Power innovated design andDDsilicon process technology to achiev

 9.1. Size:191K  ape
 ap3p080n.pdf pdf_icon

AP3P028LM

AP3P080NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P080 series are from Advanced Power innovated designand silicon process technology to achieve the

 9.2. Size:206K  ape
 ap3p050h.pdf pdf_icon

AP3P028LM

AP3P050HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50mG Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-FreeSDescriptionAP3P050 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 9.3. Size:137K  ape
 ap3p010yt.pdf pdf_icon

AP3P028LM

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , 12N60 , AP3P050M , AP3P7R0EM , AP3P9R0M , AP4024EM , AP4028EM , AP4034GM , AP4407GM , AP4423GM .

History: APT1004RCN

 

 
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