AP6679BGM Todos los transistores

 

AP6679BGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6679BGM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP6679BGM MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP6679BGM datasheet

 ..1. Size:179K  ape
ap6679bgm.pdf pdf_icon

AP6679BGM

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP6679B series are from Advanced Power innovated design and silicon process tech

 0.1. Size:95K  ape
ap6679bgm-hf.pdf pdf_icon

AP6679BGM

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o

 6.1. Size:95K  ape
ap6679bgi-hf.pdf pdf_icon

AP6679BGM

AP6679BGI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 6.2. Size:95K  ape
ap6679bgp-hf.pdf pdf_icon

AP6679BGM

AP6679BGP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugg

Otros transistores... AP4034GM , AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , AP4P018M , 12N60 , AP6N021M , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM .

History: STF12N120K5 | CJE3134K | FDBL9406F085

 

 

 

 

↑ Back to Top
.