AP9434GM Todos los transistores

 

AP9434GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9434GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0225 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP9434GM MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9434GM datasheet

 ..1. Size:167K  ape
ap9434gm.pdf pdf_icon

AP9434GM

AP9434GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D D D Lower Gate Charge RDS(ON) 22.5m D Fast Switching Characteristic ID 8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP9434 series are from

 0.1. Size:96K  ape
ap9434gm-hf.pdf pdf_icon

AP9434GM

AP9434GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D D D Lower Gate Charge RDS(ON) 22.5m D Fast Switching Characteristic ID 8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9434 series are from Advanced Power innovated design and silicon process technol

 9.1. Size:94K  ape
ap9430gh-hf.pdf pdf_icon

AP9434GM

AP9430GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S

 9.2. Size:169K  ape
ap9435gm-hf.pdf pdf_icon

AP9434GM

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

Otros transistores... AP4P018M , AP6679BGM , AP6N021M , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , NCEP15T14 , AP9467AGM , AP9467GM , AP9470GM , AP9475GM , AP9479GM , AP9487GM , AP9563GM , AP9620AGM .

 

 

 

 

↑ Back to Top
.