AP9467AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9467AGM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP9467AGM MOSFET
- Selecciónⓘ de transistores por parámetros
AP9467AGM datasheet
ap9467agm.pdf
AP9467AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9467A series are fro
ap9467agm-hf.pdf
AP9467AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
ap9467agmt-hf.pdf
AP9467AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 11.5m Low On-resistance ID 38A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast
ap9467agh.pdf
AP9467AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant S Description AP9467A series are from Advanced Power innovated design and G D silicon process technology to achieve the
Otros transistores... AP6679BGM , AP6N021M , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AON7506 , AP9467GM , AP9470GM , AP9475GM , AP9479GM , AP9487GM , AP9563GM , AP9620AGM , AP9620GM .
History: AP9977GJV | AP3P9R0J | AP04N60J | AP8N010LM | AP03N70H
History: AP9977GJV | AP3P9R0J | AP04N60J | AP8N010LM | AP03N70H
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